Integrated Assemblies Having Conductive Posts Extending Through Stacks of Alternating Materials
US-2024237336-A9 · Jul 11, 2024 · US
Nonvolatile semiconductor memory device and method for manufacturing same
US9111964B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9111964-B2 |
| Application number | US-201314019798-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 6, 2013 |
| Priority date | Mar 19, 2013 |
| Publication date | Aug 18, 2015 |
| Grant date | Aug 18, 2015 |
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Abstract
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According one embodiment, a nonvolatile semiconductor memory device, includes: a stacked body, and each of a plurality of electrode layers and each of a plurality of insulating layers being stacked alternately in the a stacked body; a first interlayer insulating film on the stacked body; a gate electrode on the first interlayer insulating film; a second interlayer insulating film on the gate electrode; a semiconductor layer extended from an upper end of the second interlayer insulating film to a lower end of the stacked body; a first insulating film between the semiconductor layer and each of the plurality of electrode layers; and a second insulating film between the semiconductor layer and the gate electrode, a thickness of the semiconductor layer provided above an upper end of the gate electrode being thicker than a thickness of the semiconductor layer provided below the upper end of the gate electrode.
First claim
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What is claimed is: 1. A nonvolatile semiconductor memory device, comprising: a foundation layer; a stacked body provided on the foundation layer, and each of a plurality of electrode layers and each of a plurality of insulating layers being stacked alternately in the stacked body; a first interlayer insulating film provided on the stacked body; a gate electrode provided on the first interlayer insulating film; a second interlayer insulating film provided on the gate elect…
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Classifications
Electricity · mapped topic
- H10D30/0413Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H01L29/66833Primary
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9111964B2 cover?
- According one embodiment, a nonvolatile semiconductor memory device, includes: a stacked body, and each of a plurality of electrode layers and each of a plurality of insulating layers being stacked alternately in the a stacked body; a first interlayer insulating film on the stacked body; a gate electrode on the first interlayer insulating film; a second interlayer insulating film on the gate el…
- Who is the assignee on this patent?
- Toshiba Kk
- What technology area does this patent fall under?
- Primary CPC classification H10D30/0413. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 18 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).