Etchant, display device and method for manufacturing display device using the same

Patent metadata

Field	Value
Publication number	US-9111813-B2
Application number	US-201414307155-A
Country	US
Kind code	B2
Filing date	Jun 17, 2014
Priority date	Dec 15, 2010
Publication date	Aug 18, 2015
Grant date	Aug 18, 2015

Abstract

An etchant includes: 5 to 20 wt % of persulfate, 1 to 10 wt % of at least one compound of an inorganic acid, an inorganic acid salt, or a mixture thereof, 0.3 to 5 wt % of a cyclic amine compound, 1 to 10 wt % of at least one compound of an organic acid, an organic acid salt, or a mixture thereof, 0.1 to 5 wt % of p-toluenesulfonic acid, and water, based on the total weight of the etchant. A copper-titanium etchant further includes 0.01 to 2 wt % of a fluoride-containing compound. A method of forming a display device using the etchant, and a display device, are also disclosed.

First claim

What is claimed is:

1. A method for manufacturing a display device, comprising:
forming a gate metal layer that includes a lower gate metal layer on an insulation substrate, and an upper gate metal layer on the lower gate metal layer;
etching the gate metal layer using a copper-titanium etchant to form a gate line including a gate electrode;
forming a gate insulating layer on the gate line;
sequentially forming a first amorphous silicon layer on the gate insulating layer, a second amorphous silicon layer on the first amorphous silicon layer, a lower data metal layer on the second amorphous silicon layer, and an upper data metal layer on the lower data metal layer;
etching the first amorphous silicon layer, the second amorphous silicon layer, the lower data metal layer and the upper data metal layer to form a semiconductor layer, an ohmic contact layer, a data line including a source electrode, and a drain electrode;
forming a passivation layer on the data line, the drain electrode and the gate insulating layer; and
forming a pixel electrode electrically connected to the drain electrode on the passivation layer,
wherein the copper-titanium etchant includes
5 to 20 wt % of persulfate,
1 to 10 wt % of at least one compound of an inorganic acid, an inorganic acid salt, or a mixture comprising at least one of the foregoing,
0.3 to 5 wt % of a cyclic amine compound,
1 to 10 wt % of at least one compound of an organic acid, an organic acid salt, or a mixture comprising at least one of the foregoing,
0.1 to 5 wt % of p-toluenesulfonic acid,
0.01 to 2 wt % of a fluoride-containing compound, and
water,
based on the total weight of the etchant.

2. The method of claim 1 , wherein the lower gate metal layer and the lower data metal layer are made of titanium or titanium-containing metal and the upper gate metal layer and the upper data metal layer are made of copper or copper-containing metal.

3. The method of claim 2 , wherein the persulfate is selected from ammonium persulfate, sodium persulfate, potassium persulfate, or a combination comprising at least one of the foregoing.

4. The method of claim 3 , wherein the inorganic acid is selected from nitric acid, sulfuric acid, phosphoric acid, perchloric acid, or a combination comprising at least one of the foregoing, and the inorganic acid salt is selected from nitrate, sulfate, phosphate, perchlorate, or a combination comprising at least one of the foregoing.

5. The method of claim 4 , wherein the cyclic amine compound is selected from 5-aminotetrazole, tolyltriazole, benzotriazole, methyltriazole, or a combination comprising at least one of the foregoing.

6. The method of claim 5 , wherein the organic acid is selected from acetic acid, glycolic acid, citric acid, oxalic acid, or a combination comprising at least one of the foregoing, and the organic acid salt is selected from a potassium salt, a sodium salt, an ammonium salt, or a combination comprising at least one of the foregoing of a compound selected from acetic acid, glycolic acid, citric acid, oxalic acid, or a combination comprising at least one of the foregoing.

7. The method of claim 6 , wherein the fluoride-containing compound is selected from ammonium fluoride, sodium fluoride, potassium fluoride, ammonium bifluoride, sodium bifluoride, potassium bifluoride, or a combination comprising at least one of the foregoing.

8. The method of claim 7 , wherein the upper data metal layer and the lower data metal layer are etched using the copper-titanium etchant at the same time.

9. The method of claim 2 , wherein the upper data metal layer is etched using a copper etchant.

10. The method of claim 9 , wherein the copper etchant includes
5 to 20 wt % of persulfate,
1 to 10 wt % of at least one compound of an inorganic acid, an inorganic acid salt, or a mixture comprising at least one of the foregoing,
0.3 to 5 wt % of a cyclic amine compound,
1 to 10 wt % of at least one compound of an organic acid, an organic acid salt, or a mixture comprising at least one of the foregoing,
0.1 to 5 wt % of p-toluenesulfonic acid, and
water,
based on the total weight of the etchant.

Assignees

• Samsung Display Co Ltd
• Dongwoo Fine Chem Co Ltd
• Samsung Display Co Ltd

Inventors

• Park Hong-Sick
• Lee Wang-Woo
• Kim Sang-Tae
• Lee Joon-Woo
• Park Young-Chul
• Jin Young-Jun
• Kang Kyong-Min
• Yoon Young-Jin
• Lee Suck-Jun
• Kwon O-Byoung
• Yu In-Ho
• Jang Sang-Hoon
• Lim Min-Ki
• Kim Dong-Ki

Classifications

• H10P50/667

  by liquid etching only · CPC title

• H10D30/6729

  characterised by the electrodes · CPC title

• H10D86/441

  Interconnections, e.g. scanning lines · CPC title

• H10D86/021

  of multiple TFTs · CPC title

• H10D86/0221 Primary

  comprising manufacture, treatment or patterning of TFT semiconductor bodies · CPC title