Automatic compilation method and framework for generating a layout of integrated memory-compute circuit
US-2024403527-A1 · Dec 5, 2024 · US
US9111061B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9111061-B2 |
| Application number | US-201213726859-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 26, 2012 |
| Priority date | Jul 11, 2012 |
| Publication date | Aug 18, 2015 |
| Grant date | Aug 18, 2015 |
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A transistor characteristic calculation apparatus using a large signal equivalent circuit model has a buffer trap circuit provided between a drain terminal and a source terminal such that a parallel circuit including a resistor and a capacitor, a diode, and another parallel circuit including a resistor and a capacitor are in turn connected in series.
Opening claim text (preview).
What is claimed is: 1. A transistor characteristic calculation apparatus using a large signal equivalent circuit model, comprising: a gate-to-source capacitance connected between a gate terminal and a source terminal; a gate-to-drain capacitance connected between the gate terminal and a drain terminal; a parallel circuit connected between the drain terminal and the source terminal and including a transconductance, a drain conductance, and a drain-to-source capacitance; and a first trap circuit connected between the drain terminal and the source terminal, wherein the first trap circuit is configured such that a first parallel circuit including a first resistor and a first capacitor, a diode, and a second parallel circuit including a second resistor and a second capacitor are in turn connected in series. 2. The transistor characteristic calculation apparatus using a large signal equivalent circuit model according to claim 1 , wherein the first trap circuit includes a first diode connected between the first parallel circuit and the second parallel circuit in forward polarity, and a second diode connected between the first parallel circuit and the second parallel circuit in opposite polarity and in parallel with the first diode. 3. A transistor characteristic calculation apparatus using a large signal equivalent circuit model, comprising: a gate-to-source capacitance connected between a gate terminal and a source terminal; a gate-to-drain capacitance connected between the gate terminal and a drain terminal; a parallel circuit connected between the drain terminal and the source terminal and including a transconductance, a drain conductance, and a drain-to-source capacitance; and a second trap circuit connected between the drain terminal and the gate terminal, wherein the second trap circuit is configured such that a third parallel circuit including a third resistor and a third capacitor, a diode, and a fourth parallel circuit including a fourth resistor and a fourth capacitor are in turn connected in series. 4. The transistor characteristic calculation apparatus using a large signal equivalent circuit model according to claim 3 , further comprising: a third trap circuit connected between the source terminal and the gate terminal, wherein the third trap circuit is configured such that a fifth parallel circuit including a fifth resistor and a fifth capacitor, a diode, and a sixth parallel circuit including a sixth resistor and a sixth capacitor are in turn connected in series. 5. The transistor characteristic calculation apparatus using a large signal equivalent circuit model according to claim 3 , further comprising: a first trap circuit connected between the drain terminal and the source terminal, wherein the first trap circuit is configured such that a first parallel circuit including a first resistor and a first capacitor, a diode, and a second parallel circuit including a second resistor and a second capacitor are in turn connected in series.
Design verification, e.g. using simulation, simulation program with integrated circuit emphasis [SPICE], direct methods or relaxation methods · CPC title
Circuit design at the physical level (physical level design for reconfigurable circuits G06F30/347) · CPC title
Physics · mapped topic
Physics · mapped topic
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