TFT array substrate, liquid crystal panel having the same, and method of manufacturing the TFT array substrate

Patent metadata

Field	Value
Publication number	US-9110342-B2
Application number	US-201314061445-A
Country	US
Kind code	B2
Filing date	Oct 23, 2013
Priority date	Nov 12, 2012
Publication date	Aug 18, 2015
Grant date	Aug 18, 2015

Abstract

A TFT array substrate includes: a pixel electrode, which is arranged in a pixel region formed in a matrix shape by a gate wiring and a source wiring on an insulating substrate; a switching element, which is disposed at an intersection of the gate wiring and the source wiring; a counter electrode, which is formed on the pixel electrode with interposing an insulating film; and a silicon film is formed on a lower layer so as to face the source wiring, wherein the source wiring and the pixel electrode are formed of the same transparent conductive material layer, and the source wiring and the silicon film are formed so that end faces of the source wiring and the silicon film are overlapped and a width of the source wiring is identical to a width of the silicon film, in a plan view.

First claim

What is claimed is:

1. A TFT array substrate employing a fringe field mode comprising:
a pixel electrode, which is arranged in a pixel region formed in a matrix shape by a gate wiring and a source wiring on an insulating substrate;
a switching element, which is disposed at an intersection of the gate wiring and the source wiring;
a counter electrode, which is formed on the pixel electrode with an insulating film interposed therebetween; and
a silicon film formed on a lower l…

Assignees

• Mitsubishi Electric Corp

Inventors

• Minowa Kenichi

Classifications

• H10D86/443

  Electricity · mapped topic

• H10D86/60

  Electricity · mapped topic

• H01L27/1244

  Electricity · mapped topic

• G02F2001/134372

  Physics · mapped topic

• G02F1/1368

  Physics · mapped topic