Use of quartz plates during growth of single crystal silicon ingots
US-12146236-B2 · Nov 19, 2024 · US
US9109300B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9109300-B2 |
| Application number | US-201113179280-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 8, 2011 |
| Priority date | Jul 20, 2010 |
| Publication date | Aug 18, 2015 |
| Grant date | Aug 18, 2015 |
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The present invention provides a vitreous silica crucible which can suppress buckling and sidewall lowering of the crucible in multi-pulling. According to the present invention, provided is a vitreous silica crucible for pulling a silicon single crystal, comprising a mineralizer on an inner surface of the crucible, wherein the mineralizer contains at least one atoms selected from the group consisting of Ca, Sr, Ba, Ra, Ti, Zr, Cr, Mo, Fe, Co, Ni, Cu, and Ag, and the concentration of the mineralizer on the inner surface is 1.0×10 5 to 1.0×10 17 atoms/cm 2 .
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What is claimed is: 1. A vitreous silica crucible for pulling a silicon single crystal, comprising a mineralizer disposed only on an entire innermost surface of the crucible, wherein the mineralizer contains at least one atoms selected from the group consisting of Ca and Fe, and the concentration of the mineralizer on the inner surface is 1.0×10 8 to 3.0×10 11 atoms/cm 2 as measured by spraying a cleaning liquid for dissolving the mineralizer onto the inner surface to capture th…
Chemistry & Metallurgy · mapped topic
Cross-Sectional Technologies · mapped topic
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
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