Solid-state imaging device, method of manufacturing the same, and electronic apparatus
US-2017110502-A1 · Apr 20, 2017 · US
US9106854B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9106854-B2 |
| Application number | US-201414449557-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 1, 2014 |
| Priority date | Oct 4, 2010 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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A reference pixel sensor cell (e.g., global shutter) with hold node for leakage cancellation, methods of manufacture and design structure is provided. A pixel array includes one or more reference pixel sensor cells dispersed locally throughout active light sensing regions. The one or more reference pixel sensor cells provides a reference signal used to correct for photon generated leakage signals which vary by locality within the active light sensing regions.
Opening claim text (preview).
What is claimed: 1. A method of compensating for leakage in a pixel array comprising: providing a known voltage signal to a reference pixel sensor cell in proximity to an active pixel sensor cell; reading out an output voltage signal of the reference pixel sensor cell and calculating the leakage as a difference between the known voltage signal and the output voltage signal; adding the calculated leakage to an output voltage signal of the active pixel sensor cell; and holding…
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