Method for fabricating an elctro-absorption modulated laser and electro-absorption modulated laser
US-2019326729-A1 · Oct 24, 2019 · US
Distributed feedback surface emitting laser
US9106053B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9106053-B2 |
| Application number | US-201213652136-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 15, 2012 |
| Priority date | Oct 15, 2012 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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Abstract
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A semiconductor surface emitting laser (SEL) includes an active zone comprising quantum well structures separated by spacer layers. The quantum well structures are configured to provide optical gain for the SEL at a lasing wavelength, λ lase . Each quantum well structure and an adjacent spacer layer are configured to form an optical pair of a distributed Bragg reflector (DBR). The active zone including a plurality of the DBR optical pairs is configured to provide optical feedback for the SEL at λ lase .
First claim
Opening claim text (preview).
The invention claimed is: 1. A semiconductor surface emitting laser (SEL), comprising an active zone including quantum well structures separated by spacer layers, the quantum well structures configured to provide optical gain for the SEL at a lasing wavelength, λ lase , each quantum well structure and an adjacent spacer layer configured to form an optical pair of a distributed Bragg reflector (DBR), the active zone including a plurality of the DBR optical pairs and configured to pr…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H01S5/1228Primary
Electricity · mapped topic
Operations & Transport · mapped topic
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- What does patent US9106053B2 cover?
- A semiconductor surface emitting laser (SEL) includes an active zone comprising quantum well structures separated by spacer layers. The quantum well structures are configured to provide optical gain for the SEL at a lasing wavelength, λ lase . Each quantum well structure and an adjacent spacer layer are configured to form an optical pair of a distributed Bragg reflector (DBR). The active zone i…
- Who is the assignee on this patent?
- Palo Alto Res Ct Inc
- What technology area does this patent fall under?
- Primary CPC classification H01S5/1228. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 11 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).