Methods of forming thin film resistors with high power handling capability
US-9842674-B2 · Dec 12, 2017 · US
US9105957B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105957-B2 |
| Application number | US-201213435594-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 30, 2012 |
| Priority date | Dec 28, 2011 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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An attenuator includes: a first portion including a first insulating substrate and a resistor section formed on the first insulating substrate; and a second portion including a second insulating substrate and a terminal section, the second insulating substrate being separated from the first insulating substrate, and the terminal section being formed on the second insulating substrate to be connected to the resistor section.
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What is claimed is: 1. An attenuator comprising: a first portion including a first insulating substrate and a resistor section formed on the first insulating substrate; and a second portion including a second insulating substrate and a terminal section, the second insulating substrate being separated from the first insulating substrate, and the terminal section being formed on the second insulating substrate to be connected to the resistor section, wherein the terminal section…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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