Metal gates for semiconductor devices and method thereof
US-2024429281-A1 · Dec 26, 2024 · US
US9105848B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105848-B2 |
| Application number | US-37659807-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 7, 2007 |
| Priority date | Aug 7, 2006 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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The present invention provides composite organics and optoelectronic devices, including photovoltaic devices, comprising the same. In one embodiment, the present invention provides a photovoltaic cell comprising a radiation transmissive first electrode, a photosensitive layer electrically connected to the first electrode, the photosensitive layer comprising a plurality of composite organic layers, wherein each of the plurality of composite organic layers comprises a polymeric phase and a nanoparticle phase, the nanoparticle phase comprising at least one exaggerated nanocrystalline grain.
Opening claim text (preview).
That which is claimed is: 1. A method of producing a photovoltaic cell comprising: providing a radiation transmissive first electrode; providing a photosensitive composite organic layer; disposing the photosensitive composite organic layer in electrical communication with the first electrode; and disposing a second electrode in electrical communication with the photosensitive composite organic layer, wherein providing the photosensitive composite organic layer comprises prov…
Electricity · mapped topic
Electricity · mapped topic
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