Method of manufacturing a boundary acoustic wave device

Patent metadata

Field	Value
Publication number	US-9105846-B2
Application number	US-201313873301-A
Country	US
Kind code	B2
Filing date	Apr 30, 2013
Priority date	Apr 22, 2009
Publication date	Aug 11, 2015
Grant date	Aug 11, 2015

Abstract

A manufacturing method for a boundary acoustic wave device is provided which includes, an IDT electrode, a first dielectric layer, and a second dielectric layer on a piezoelectric substrate. The first dielectric layer is made of a deposited film. A thickness of the IDT electrode is about 10% or more of λ. A difference between a height of the first dielectric layer, measured from an upper surface of the piezoelectric substrate, above a center of an electrode finger of the IDT electrode and a height of the first dielectric layer, measured from the upper surface of the piezoelectric substrate, above a center of a gap between adjacent electrode fingers, i.e., a magnitude of unevenness in an upper surface of the first dielectric layer, is about 5% or less of λ.

First claim

What is claimed is:

1. A method of manufacturing a boundary acoustic wave device, the method comprising the steps of:
forming an IDT electrode on a piezoelectric substrate;
depositing a dielectric material on the piezoelectric substrate to cover the IDT electrode by a deposition method, thereby forming a first dielectric layer; and
forming a second dielectric layer on the first dielectric layer; wherein
assuming a wavelength of a boundary acoustic wave to be λ, a normalized…

Assignees

• Murata Manufacturing Co

Inventors

• Nodake Naohiro
• Takahashi Hideaki
• Saijo Shin

Classifications

• H03H3/10 Primary

  Electricity · mapped topic

• H01L41/29 Primary

  Electricity · mapped topic

• H03H2003/045

  Electricity · mapped topic

• Y10T29/49155

  Cross-Sectional Technologies · mapped topic

• Y10T29/49005

  Cross-Sectional Technologies · mapped topic