Capacitive micro-machined transducer and method of manufacturing the same
US-9231496-B2 · Jan 5, 2016 · US
US9105841B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105841-B2 |
| Application number | US-201313796496-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 12, 2013 |
| Priority date | Mar 12, 2013 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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A micro-electromechanical device and method of manufacture are disclosed. A sacrificial layer is formed on a silicon substrate. A metal layer is formed on a top surface of the sacrificial layer. Soft magnetic material is electrolessly deposited on the metal layer to manufacture the micro-electromechanical device. The sacrificial layer is removed to produce a metal beam separated from the silicon substrate by a space.
Opening claim text (preview).
What is claimed is: 1. A method of manufacturing a micro-electromechanical device, comprising: depositing a sacrificial layer on a wafer; forming a metal layer of the micro-electromechanical device on the sacrificial layer; removing the sacrificial layer to produce a suspended metal beam coupled to at least one support structure of the wafer; and electrolessly depositing a soft magnetic material on the metal layer to manufacture the micro-electromechanical device.…
Electricity · mapped topic
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