Perpendicular spin transfer torque memory (STTM) device having offset cells and method to form same

US9105839B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9105839-B2
Application numberUS-201414333180-A
CountryUS
Kind codeB2
Filing dateJul 16, 2014
Priority dateDec 21, 2012
Publication dateAug 11, 2015
Grant dateAug 11, 2015

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

Perpendicular spin transfer torque memory (STTM) devices having offset cells and methods of fabricating perpendicular STTM devices having offset cells are described. For example, a spin torque transfer memory (STTM) array includes a first load line disposed above a substrate and having only a first STTM device. The STTM array also includes a second load line disposed above the substrate, adjacent the first load line, and having only a second STTM device, the second STTM device non-co-planar with the first STTM device.

First claim

Opening claim text (preview).

What is claimed is: 1. A method of fabricating a spin torque transfer memory (STTM) array, the method comprising: forming a plurality of load line lower portions in a dielectric layer disposed above a substrate, each of the load line lower portions coupled to a corresponding transistor contact; forming a first plurality of STTM devices, one device for each of alternating ones of the plurality of load line lower portions; forming a plurality of load line upper portions, one upp…

Assignees

Inventors

Classifications

Patent family

Related publications grouped by family.

External sources

Next steps

Free tools are coming soon. Tell us what you want to track and we'll notify you.

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US9105839B2 cover?
Perpendicular spin transfer torque memory (STTM) devices having offset cells and methods of fabricating perpendicular STTM devices having offset cells are described. For example, a spin torque transfer memory (STTM) array includes a first load line disposed above a substrate and having only a first STTM device. The STTM array also includes a second load line disposed above the substrate, adjace…
Who is the assignee on this patent?
Doyle Brian S, Kencke David L, Kuo Charles C, and 6 more
What technology area does this patent fall under?
Primary CPC classification G11C11/161. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Aug 11 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).