Method for bonding semiconductor substrates

Patent metadata

Field	Value
Publication number	US-9105827-B2
Application number	US-201414322787-A
Country	US
Kind code	B2
Filing date	Jul 2, 2014
Priority date	Nov 29, 2011
Publication date	Aug 11, 2015
Grant date	Aug 11, 2015

Abstract

A method is provided for bonding a first substrate carrying a semiconductor device layer on its front surface to a second substrate. The method comprises producing the semiconductor device layer on the front surface of the first substrate, depositing a first metal bonding layer or a stack of metal layers on the first substrate, on top of the semiconductor device layer, depositing a second metal bonding layer or a stack of metal layers on the front surface of the second substrate, depositing a metal stress-compensation layer on the back side of the second substrate, thereafter establishing a metal bond between the first and second substrate, by bringing the first and second metal bonding layers or stacks of layers into mutual contact under conditions of mechanical pressure and temperature suitable for obtaining the metal bond, and removing the first substrate.

First claim

What is claimed is:

1. A layer stack for use in the manufacture of a semiconductor device, comprising:
a first substrate;
a semiconductor device layer on a front surface of the first substrate;
a first bonding stack of one or more metal la ers on toy of the semiconductor device layer;
a second bonding stack of one or more metal layers on a front surface of a second substrate;
a metal stress compensation layer on a back surface of the second substrate; and
a metal bond be…

Assignees

• Imec

Inventors

• Pham Nga Phuong
• Rosmeulen Maarten
• Vandevelde Bart

Classifications

• H10P10/128 Primary

  Electricity · mapped topic

• H10W72/90

  Electricity · mapped topic

• H10H20/01335

  Electricity · mapped topic

• H10H20/825

  Electricity · mapped topic

• H10H20/815

  Electricity · mapped topic