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US-12183868-B2 · Dec 31, 2024 · US
Semiconductor light emitting device
US9105810B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105810-B2 |
| Application number | US-201213404607-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 24, 2012 |
| Priority date | Oct 11, 2011 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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- Title
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Abstract
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According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting unit, a second semiconductor layer, a reflecting electrode, an oxide layer and a nitrogen-containing layer. The first semiconductor layer is of a first conductivity type. The light emitting unit is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting unit and is of a second conductivity type. The reflecting electrode is provided on the second semiconductor layer and includes Ag. The oxide layer is provided on the reflecting electrode. The oxide layer is insulative and has a first opening. The nitrogen-containing layer is provided on the oxide layer. The nitrogen-containing layer is insulative and has a second opening communicating with the first opening.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor light emitting device, comprising: a first semiconductor layer of a first conductivity type; a light emitting unit provided on the first semiconductor layer; a second semiconductor layer of a second conductivity type provided on the light emitting unit; a reflecting electrode provided on the second semiconductor layer and including Ag; an oxide layer provided on the reflecting electrode, the oxide layer being insulative and having a f…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9105810B2 cover?
- According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting unit, a second semiconductor layer, a reflecting electrode, an oxide layer and a nitrogen-containing layer. The first semiconductor layer is of a first conductivity type. The light emitting unit is provided on the first semiconductor layer. The second semiconductor layer is …
- Who is the assignee on this patent?
- Ito Toshihide, Katsuno Hiroshi, Nunoue Shinya, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification H10H20/825. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 11 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).