Photovoltaic devices including nitrogen-containing metal contact
US-2015380601-A1 · Dec 31, 2015 · US
US9105802B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105802-B2 |
| Application number | US-201414251280-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 11, 2014 |
| Priority date | Sep 26, 2011 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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A method of making a photovoltaic device is presented. The method includes disposing an absorber layer on a window layer. The method further includes treating at least a portion of the absorber layer with a first solution including a first metal salt to form a first component, wherein the first metal salt comprises a first metal selected from the group consisting of manganese, cobalt, chromium, zinc, indium, tungsten, molybdenum, and combinations thereof. The method further includes treating at least a portion of the first component with cadmium chloride to form a second component. The method further includes treating at least a portion of the second component with a second solution including a second metal salt to form an interfacial layer on the second component, wherein the second metal salt comprises a second metal selected from the group consisting of manganese, cobalt, nickel, zinc, and combinations thereof.
Opening claim text (preview).
The invention claimed is: 1. A method of making a photovoltaic device, comprising: disposing an absorber layer on a window layer; treating at least a portion of the absorber layer with a dopant solution comprising a dopant metal salt to form a first component, after the step of disposing the absorber layer on the window layer, wherein the step of treating at least a portion of the absorber layer with a dopant solution consists essentially of a soaking treatment wherein a portion…
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