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US-10840616-B2 · Nov 17, 2020 · US
Oxide superconductor thin film, superconducting fault current limiter, and method for manufacturing oxide superconductor thin film
US9105794B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105794-B2 |
| Application number | US-201214123077-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 30, 2012 |
| Priority date | May 31, 2011 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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Abstract
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An oxide superconducting thin film includes a substrate having a single crystal structure, the main face of the substrate and a crystal face of the single crystal structure having an angle therebetween; an intermediate layer formed on the main face of the substrate and having an axis oriented in a direction perpendicular to the crystal face; and a superconducting layer formed on the intermediate layer and containing, as a main component, an oxide superconductor having a c-axis oriented in a direction perpendicular to the surface of the intermediate layer. A superconducting fault current limiter and a method of manufacturing an oxide superconducting thin film are also provided.
First claim
Opening claim text (preview).
The invention claimed is: 1. An oxide superconducting thin film, comprising: a substrate having a single crystal structure, a main face of the substrate and a crystal face of the single crystal structure forming an angle therebetween, wherein the angle formed between the main face of the substrate and the crystal face of the single crystal structure is from 2° to 15°; an intermediate layer formed on the main face of the substrate, the intermediate layer having an axis oriented i…
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Electricity · mapped topic
Electricity · mapped topic
- H01L39/128Primary
Electricity · mapped topic
Chemistry & Metallurgy · mapped topic
Electricity · mapped topic
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- What does patent US9105794B2 cover?
- An oxide superconducting thin film includes a substrate having a single crystal structure, the main face of the substrate and a crystal face of the single crystal structure having an angle therebetween; an intermediate layer formed on the main face of the substrate and having an axis oriented in a direction perpendicular to the crystal face; and a superconducting layer formed on the intermediat…
- Who is the assignee on this patent?
- Nakao Kengo, Kasahara Hajime, Matsui Masakazu, and 7 more
- What technology area does this patent fall under?
- Primary CPC classification H01L39/128. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 11 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).