Photodetector
US-12046618-B2 · Jul 23, 2024 · US
Geiger-mode avalanche photodiode with high signal-to-noise ratio, and corresponding manufacturing process
US9105789B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105789-B2 |
| Application number | US-201113070876-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 24, 2011 |
| Priority date | Mar 30, 2010 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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Abstract
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An embodiment of a geiger-mode avalanche photodiode includes: a body of semiconductor material, having a first surface and a second surface; a cathode region of a first type of conductivity, which extends within the body; and an anode region of a second type of conductivity, which extends within the cathode region and faces the first surface, the anode and cathode regions defining a junction. The anode region includes at least two subregions, which extend at a distance apart within the cathode region starting from the first surface, and delimit at least one gap housing a portion of the cathode region, the maximum width of the gap and the levels of doping of the two subregions and of the cathode region being such that, by biasing the junction at a breakdown voltage, a first depleted region occupies completely the portion of the cathode region within the gap.
First claim
Opening claim text (preview).
The invention claimed is: 1. A semiconductor device comprising: a first layer of semiconductor material having a first conductivity type; a first region being in the first layer and having the first conductivity type; a second region being in the first region, having a second conductivity type, said second region having a plurality of fingers extending across said first region and being separated from one another by portions of the first region, and a ring being integral wi…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9105789B2 cover?
- An embodiment of a geiger-mode avalanche photodiode includes: a body of semiconductor material, having a first surface and a second surface; a cathode region of a first type of conductivity, which extends within the body; and an anode region of a second type of conductivity, which extends within the cathode region and faces the first surface, the anode and cathode regions defining a junction. T…
- Who is the assignee on this patent?
- Mazzillo Massimo Cataldo, Sanfilippo Delfo Nunziato, St Microelectronics Srl
- What technology area does this patent fall under?
- Primary CPC classification H10F30/225. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 11 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).