Annealing for damage free laser processing for high efficiency solar cells
US-9214585-B2 · Dec 15, 2015 · US
US9105775B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105775-B2 |
| Application number | US-201213535974-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 28, 2012 |
| Priority date | Jun 28, 2012 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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A multi-junction photovoltaic device includes a germanium layer having pyramidal shapes with (111) facets exposed to form a textured surface. A first p-n junction is formed on or over the textured surface. Another p-n junction is formed over the first p-n junction and following the textured surface.
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What is claimed is: 1. A multi-junction photovoltaic device, comprising: a germanium layer having substantially symmetrical pyramidal shapes with (111) facets exposed to form a textured substrate; a first p-n junction formed directly on the textured substrate and following the textured substrate; and at least one other p-n junction formed over the first p-n junction and following the textured substrate. 2. The device as recited in claim 1 , wherein the g…
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