In-line germanium avalanche photodetector

Patent metadata

Field	Value
Publication number	US-9105772-B2
Application number	US-201313953050-A
Country	US
Kind code	B2
Filing date	Jul 29, 2013
Priority date	Jul 30, 2012
Publication date	Aug 11, 2015
Grant date	Aug 11, 2015

Abstract

A method for manufacturing a photodetector including growing a quantity of germanium within an optical pathway of a waveguide. The detection of a current caused by an interaction between the optical signal and the germanium is used to indicate the presence of an optical signal passing through the waveguide.

First claim

What is claimed is:

1. A photodetector comprising:
a waveguide having an optical pathway;
a germanium region of the photodetector located in the optical pathway, wherein an optical signal is detected upon interacting with the germanium region of the photodetector and the optical signal passes through the waveguide; and
at least two implant regions adjacent to the germanium region of the photodetector.

2. The photodetector of claim 1 , wherein the optical signal passes through the waveguide by entering a first end of the waveguide and exiting through a second end of the waveguide.

3. The photodetector of claim 1 , wherein the germanium region has width that is designed to achieve a desired electric field strength when a known voltage is applied across that germanium region.

4. The photodetector of claim 1 , further comprising at least one interface between the germanium region of the photodetector and the waveguide, wherein the interface gradually transitions to reduce a quantity of unwanted optical signal reflections.

5. The photodetector of claim 4 , wherein the interface is a location where the index of refraction changes between the waveguide having a first index of refraction value and the germanium region having a second index of refraction value.

6. A photodetector comprising:
a waveguide having an optical pathway; and
a germanium region of the photodetector located in the optical pathway, wherein an optical signal is detected upon interacting with the germanium region of the photodetector and the optical signal passes through the waveguide, wherein the germanium region has width that is designed to achieve a desired electric field strength when a known voltage is applied across that germanium region.

7. A telecommunications system comprising:
an integrated circuit having a waveguide, wherein the waveguide has an optical pathway for transmitting a quantity of optical signals;
a germanium photodetector located in the optical pathway, wherein the germanium photodetector detects the presence of at least one optical signal without terminating the optical signal; and
at least two implant regions adjacent to the germanium photodetector.

8. A method for detecting an optical signal in an integrated circuit comprising:
transmitting at least one optical signal through a waveguide wherein the optical signal interacts with a germanium region of a photodetector without terminating the optical signal; and
creating an electric field by applying an external voltage across the germanium region of the photodetector, wherein the electric field has a strength that is inversely proportional to the width of the germanium region of the photodetector.

9. The method of claim 8 , wherein the optical signal upon passing through the waveguide and the germanium photodetector may be applied to a secondary integrated circuit function.

10. The method of claim 8 , further comprising detecting at least one optical signal by measuring a quantity of current generated when the optical signal interacts with the germanium region of the photodetector.

11. The method of claim 8 , further comprising adjusting the sensitivity of the germanium photodetector by varying the external voltage applied across the germanium region of the photodetector.

12. The method of claim 8 , further comprising reducing, a quantity of unwanted optical signal reflections by increasing the strength of the electric field.

13. The method of claim 12 , wherein the strength of the electric field is increased by increasing the external voltage applied across the germanium region of the photodetector.

14. A photodetector comprising:
a waveguide having an optical pathway;
a germanium region of the photodetector located in the optical pathway, wherein an optical signal is detected upon interacting with the germanium region of the photodetector and the optical signal passes through the waveguide; and
at least one interface between the germanium region of the photodetector and the waveguide, wherein the interface gradually transitions to reduce a quantity of unwanted optical signal reflections, and wherein the interface is a location where the index of refraction changes between the waveguide having a first index of refraction value and the germanium region having a second index of refraction value.

Assignees

• Bae Sys Inf & Elect Sys Integ

Inventors

• Pomerene Andrew T S
• Vu Vu A
• Kamocsai Robert L

Classifications

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• G02B6/4295

  coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors · CPC title

• G02B6/122

  Basic optical elements, e.g. light-guiding paths · CPC title

• H10F77/40

  Optical elements or arrangements (surface textures H10F77/70) · CPC title

• H10F71/1212

  consisting of germanium · CPC title