Conductive structure body precursor, conductive structure body and method for manufacturing the same
US-2015370359-A1 · Dec 24, 2015 · US
Shallow junction photovoltaic devices
US9105769B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105769-B2 |
| Application number | US-201314025525-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 12, 2013 |
| Priority date | Sep 12, 2013 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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Abstract
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A method for fabricating a photovoltaic device includes forming a first contact on a crystalline substrate, by epitaxially growing a first doped layer having a doping concentration of 10 19 cm −3 or greater, a dislocation density of 10 5 cm −2 or smaller, a hydrogen content of 0.1 atomic percent or smaller, and a thickness configured to reduce Auger recombination in the epitaxially grown doped layer. A first passivation layer is formed on the first doped layer. A second contact is formed on the crystalline substrate on a side opposite the first contact by epitaxially growing a second doped layer having a doping concentration of 10 19 cm −3 or greater, a dislocation density of 10 5 cm −2 or smaller, a hydrogen content of 0.1 atomic percent or smaller and a thickness configured to reduce Auger recombination in the second epitaxially grown doped layer. A second passivation layer is formed on the second doped layer.
First claim
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What is claimed is: 1. A method for fabricating a photovoltaic device, comprising: forming a first contact on a crystalline substrate, the first contact being formed by: epitaxially growing a first doped layer having a doping concentration of 10 19 cm −3 or greater, a dislocation density of 10 5 cm −2 or smaller, a hydrogen content of 0.1 atomic percent or smaller, and a thickness configured to reduce Auger recombination in the epitaxially grown doped layer; and forming a f…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9105769B2 cover?
- A method for fabricating a photovoltaic device includes forming a first contact on a crystalline substrate, by epitaxially growing a first doped layer having a doping concentration of 10 19 cm −3 or greater, a dislocation density of 10 5 cm −2 or smaller, a hydrogen content of 0.1 atomic percent or smaller, and a thickness configured to reduce Auger recombination in the epitaxially grown do…
- Who is the assignee on this patent?
- IBM
- What technology area does this patent fall under?
- Primary CPC classification H10F77/244. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 11 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).