Image sensor
US-2024380999-A1 · Nov 14, 2024 · US
Negatively charged layer to reduce image memory effect
US9105767B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105767-B2 |
| Application number | US-201414331652-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 15, 2014 |
| Priority date | Oct 25, 2012 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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Abstract
Official abstract text for this publication.
An image sensor pixel includes a photodiode region having a first polarity doping type disposed in a semiconductor layer. A pinning surface layer having a second polarity doping type is disposed over the photodiode region in the semiconductor layer. A first polarity charge layer is disposed proximate to the pinning surface layer over the photodiode region. A contact etch stop layer is disposed over the photodiode region proximate to the first polarity charge layer. The first polarity charge layer is disposed between the pinning surface layer and the contact etch stop layer such that first polarity charge layer cancels out charge having a second polarity that is induced in the contact etch stop layer. The first polarity charge layer is disposed between a first one of a plurality of passivation layers and a second one of the plurality of passivation layers disposed over the photodiode region.
First claim
Opening claim text (preview).
What is claimed is: 1. An image sensor pixel, comprising: a photodiode region having a first polarity doping type disposed in a semiconductor layer; a pinning surface layer having a second polarity doping type disposed over the photodiode region in the semiconductor layer, wherein the second polarity is opposite from the first polarity; a first polarity charge layer disposed proximate to the pinning surface layer over the photodiode region; a contact etch stop layer disposed over t…
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Classifications
Electricity · mapped topic
- H10F39/803Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10F77/20Primary
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9105767B2 cover?
- An image sensor pixel includes a photodiode region having a first polarity doping type disposed in a semiconductor layer. A pinning surface layer having a second polarity doping type is disposed over the photodiode region in the semiconductor layer. A first polarity charge layer is disposed proximate to the pinning surface layer over the photodiode region. A contact etch stop layer is disposed …
- Who is the assignee on this patent?
- Omnivision Tech Inc
- What technology area does this patent fall under?
- Primary CPC classification H10F39/803. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 11 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).