Light Emitting Diode Epitaxial Structure and Light Emitting Diode
US-2024297271-A1 · Sep 5, 2024 · US
Light emitting diode chip and manufacturing method thereof
US9105763B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105763-B2 |
| Application number | US-201314062830-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 24, 2013 |
| Priority date | May 3, 2013 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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Abstract
Official abstract text for this publication.
A light emitting diode (LED) chip includes an N-type semiconductor layer, a compensation layer arranged on the N-type semiconductor layer, an active layer arranged on the compensation layer; and a P-type semiconductor layer arranged on the active layer. During growth of the compensation layer, atoms of an element (i.e., Al) of the compensation layer move to fill epitaxial defects in the N-type semiconductor layer, wherein the epitaxial defects are formed due to lattice mismatch when growing the N-type semiconductor. A method for manufacturing the chip is also disclosed. The compensation layer is made of a compound having a composition of Al x Ga 1-x N.
First claim
Opening claim text (preview).
What is claimed is: 1. A light emitting diode (LED) chip comprising: an N-type semiconductor layer; a compensation layer arranged on the N-type semiconductor layer, atoms of a component of a compound constituting the compensation layer filling in epitaxial defects in the N-type semiconductor layer formed due to lattice mismatch; an active layer arranged on the compensation layer; and a P-type semiconductor layer arranged on the active layer; wherein the compensation layer…
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Classifications
Electricity · mapped topic
- H10H20/01335Primary
Electricity · mapped topic
- H10H20/81Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9105763B2 cover?
- A light emitting diode (LED) chip includes an N-type semiconductor layer, a compensation layer arranged on the N-type semiconductor layer, an active layer arranged on the compensation layer; and a P-type semiconductor layer arranged on the active layer. During growth of the compensation layer, atoms of an element (i.e., Al) of the compensation layer move to fill epitaxial defects in the N-type …
- Who is the assignee on this patent?
- Advanced Optoelectronic Tech
- What technology area does this patent fall under?
- Primary CPC classification H10H20/01335. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 11 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).