Transversely-excited film bulk acoustic resonator with a back-side dielectric layer
US-2024396526-A1 · Nov 28, 2024 · US
Integrated semiconductor devices with single crystalline beam, methods of manufacture and design structure
US9105751B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105751-B2 |
| Application number | US-201113294603-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 11, 2011 |
| Priority date | Nov 11, 2011 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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Abstract
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Bulk acoustic wave filters and/or bulk acoustic resonators integrated with CMOS devices, methods of manufacture and design structure are provided. The method includes forming a single crystalline beam from a silicon layer on an insulator. The method further includes providing a coating of insulator material over the single crystalline beam. The method further includes forming a via through the insulator material exposing a wafer underlying the insulator. The insulator material remains over the single crystalline beam. The method further includes providing a sacrificial material in the via and over the insulator material. The method further includes providing a lid on the sacrificial material. The method further includes venting, through the lid, the sacrificial material and a portion of the wafer under the single crystalline beam to form an upper cavity above the single crystalline beam and a lower cavity in the wafer, below the single crystalline beam.
First claim
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What is claimed: 1. A method comprising: forming a single crystalline beam from a silicon layer on an insulator; providing a coating of insulator material over the single crystalline beam; forming a via through the insulator material exposing a wafer underlying the insulator, wherein the insulator material remains over the single crystalline beam; providing a sacrificial material in the via and over the insulator material; providing a lid on the sacrificial material; and…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9105751B2 cover?
- Bulk acoustic wave filters and/or bulk acoustic resonators integrated with CMOS devices, methods of manufacture and design structure are provided. The method includes forming a single crystalline beam from a silicon layer on an insulator. The method further includes providing a coating of insulator material over the single crystalline beam. The method further includes forming a via through the …
- Who is the assignee on this patent?
- Harame David L, Stamper Anthony K, IBM
- What technology area does this patent fall under?
- Primary CPC classification H03H3/02. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 11 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).