Semiconductor device and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-9105749-B2
Application number	US-201213466583-A
Country	US
Kind code	B2
Filing date	May 8, 2012
Priority date	May 13, 2011
Publication date	Aug 11, 2015
Grant date	Aug 11, 2015

Abstract

In a transistor including a wide band gap semiconductor layer as a semiconductor layer, a wide band gap semiconductor layer is separated into an island shape by an insulating layer with passivation properties for preventing atmospheric components from permeating. The edge portion of the island shape wide band gap semiconductor layer is in contact with the insulating film; thus, moisture or atmospheric components can be prevented from entering from the edge portion of the semiconductor layer to the wide band gap semiconductor layer.

First claim

What is claimed is:

1. A semiconductor device comprising:
a first insulating layer including a projection and a trench;
a semiconductor layer over the first insulating layer, the semiconductor layer including a semiconductor whose band gap is wider than a band gap of silicon;
a second insulating layer in contact with a side surface of the semiconductor layer, a lower part of the second insulating layer embedded into the trench of the first insulating layer;
a third insulatin…

Assignees

• Sasagawa Shinya
• Ishizuka Akihiro
• Hatano Takehisa
• Semiconductor Energy Lab

Inventors

• Sasagawa Shinya
• Ishizuka Akihiro
• Hatano Takehisa

Classifications

• H10D86/423

  Electricity · mapped topic

• H10D86/60

  Electricity · mapped topic

• H10D84/02

  Electricity · mapped topic

• H10D84/01

  Electricity · mapped topic

• H10D30/6758

  Electricity · mapped topic