Metal gates for semiconductor devices and method thereof
US-2024429281-A1 · Dec 26, 2024 · US
US9105746B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105746-B2 |
| Application number | US-201414521083-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 22, 2014 |
| Priority date | Oct 22, 2013 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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A method for manufacturing a field effect transistor of a non-planar type, comprising providing a substrate having an initially planar front main surface, and providing shallow trench isolation structures in the substrate on the front surface, thereby defining a plurality of fin structures in the substrate between the shallow trench isolation structures. Top surfaces of the shallow trench isolation structures and the fin structures abut on a common planar surface, and sidewalls of the fin structures are fully concealed by the shallow trench isolation structures. The method also includes forming a dummy gate structure over a central portion of the plurality of fin structures on the common planar surface, forming dielectric spacer structures around the dummy gate structure, and removing the dummy gate structure, thereby leaving a gate trench defined by the dielectric spacer structures. Further, the method includes removing an upper portion of at least two shallow trench isolation structures to expose at least a portion of the sidewalls of the fin structures within the gate trench, and forming a final gate stack in the gate trench.
Opening claim text (preview).
What is claimed is: 1. A method for manufacturing a field effect transistor of a non-planar type, comprising: providing a substrate having an initially planar front main surface; providing shallow trench isolation structures in the substrate on the front surface, thereby defining a plurality of fin structures in the substrate between the shallow trench isolation structures, wherein top surfaces of the shallow trench isolation structures and the fin structures are abutting on a c…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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