Transistor and display device

Patent metadata

Field	Value
Publication number	US-9105735-B2
Application number	US-201414217887-A
Country	US
Kind code	B2
Filing date	Mar 18, 2014
Priority date	Sep 4, 2009
Publication date	Aug 11, 2015
Grant date	Aug 11, 2015

Abstract

It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a gate electrode;
a gate insulating layer over the gate electrode;
an oxide semiconductor layer over the gate insulating layer;
an oxide insulating layer over the oxide semiconductor layer;
a source electrode layer over the oxide semiconductor layer and the oxide insulating layer;
a drain electrode layer over the oxide semiconductor layer and the oxide insulating layer; and
an insulating layer over the oxi…

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei
• Sasaki Toshinari
• Sakata Junichiro
• Tsubuku Masashi

Classifications

• H10D86/40

  Electricity · mapped topic

• H10D30/6743

  Electricity · mapped topic

• H10D30/6739

  Electricity · mapped topic

• H10D30/6737

  Electricity · mapped topic

• H10D86/481

  Electricity · mapped topic