Semiconductor device

Patent metadata

Field	Value
Publication number	US-9105732-B2
Application number	US-201414483671-A
Country	US
Kind code	B2
Filing date	Sep 11, 2014
Priority date	Sep 16, 2011
Publication date	Aug 11, 2015
Grant date	Aug 11, 2015

Abstract

To provide a transistor which includes an oxide semiconductor and is capable of operating at high speed or a highly reliable semiconductor device including the transistor, a transistor in which an oxide semiconductor layer including a pair of low-resistance regions and a channel formation region is provided over an electrode layer, which is embedded in a base insulating layer and whose upper surface is at least partly exposed from the base insulating layer, and a wiring layer provided above the oxide semiconductor layer is electrically connected to the electrode layer or a part of a low-resistance region of the oxide semiconductor layer, which overlaps with the electrode layer.

First claim

The invention claimed is:

1. A method for manufacturing a semiconductor device comprising the steps of:
forming a conductive layer embedded in a first insulating layer;
forming an oxide semiconductor layer over and in contact with the conductive layer and the first insulating layer;
forming a gate insulating layer over the oxide semiconductor layer;
forming a gate electrode over the gate insulating layer;
adding a dopant to the oxide semiconductor layer using the gate elec…

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei
• Isobe Atsuo
• Sasaki Toshinari

Classifications

• H10D86/423

  Electricity · mapped topic

• H10D86/411

  Electricity · mapped topic

• H10D86/60

  Electricity · mapped topic

• H10D30/6755 Primary

  Electricity · mapped topic

• H01L27/1225

  Electricity · mapped topic