Thin film transistor and fabrication method thereof

Patent metadata

Field	Value
Publication number	US-9105730-B2
Application number	US-201314085813-A
Country	US
Kind code	B2
Filing date	Nov 21, 2013
Priority date	Nov 21, 2012
Publication date	Aug 11, 2015
Grant date	Aug 11, 2015

Abstract

A thin film transistor and a fabrication method thereof are provided. A metal patterning layer is formed on the metal oxide semiconductor layer of a thin film transistor to shield the metal oxide semiconductor layer from the water, oxygen and light in the environment.

First claim

What is claimed is:

1. A thin film transistor, comprising:
a gate disposed on a substrate;
a gate insulating layer disposed on the gate and the substrate;
a metal oxide semiconductor layer disposed on the gate insulating layer;
an insulating layer disposed on the metal oxide semiconductor layer;
a source and a drain respectively disposed on the two sides of the metal oxide semiconductor layer and connecting to the metal oxide semiconductor layer;
a metal pattering layer…

Assignees

• E Ink Holdings Inc

Inventors

• Chen Wei-Tsung
• Shinn Ted-Hong
• Tsai Chuang-Chuang
• Yang Chih-Hsiang
• Yeh Chia-Chun
• Tang Wen-Chung

Classifications

• H10D99/00

  Electricity · mapped topic

• H10D30/6755 Primary

  Electricity · mapped topic

• H10D30/031 Primary

  Electricity · mapped topic

• H01L29/66969

  Electricity · mapped topic

• H01L29/7869 Primary

  Electricity · mapped topic