Display substrate and display panel in each of which distance from convex structure to a substrate and distance from alignment layer to the substrate has preset difference therebetween
US-12164187-B2 · Dec 10, 2024 · US
Semiconductor element and display device using the same
US9105727B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105727-B2 |
| Application number | US-201414582242-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 24, 2014 |
| Priority date | Apr 9, 2002 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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Abstract
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A semiconductor having an active layer; a gate insulating film in contact with the semiconductor; a gate electrode opposite to the active layer through the gate insulating film; a first nitride insulating film formed over the active layer; a photosensitive organic resin film formed on the first nitride insulating film; a second nitride insulating film formed on the photosensitive organic resin film; and a wiring provided on the second, nitride insulating film. A first opening portion is provided in the photosensitive organic resin film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device comprising: a semiconductor layer, a first inorganic insulating film over the semiconductor layer, a first conductive layer over the first inorganic insulating film; an organic insulating film over the first conductive layer; and a second conductive layer over the organic insulating film, wherein a first opening overlapping with the semiconductor layer is formed in the first inorganic insulating film, the first conductive lay…
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Electricity · mapped topic
Electricity · mapped topic
- G02F1/136227Primary
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
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Frequently asked questions
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- What does patent US9105727B2 cover?
- A semiconductor having an active layer; a gate insulating film in contact with the semiconductor; a gate electrode opposite to the active layer through the gate insulating film; a first nitride insulating film formed over the active layer; a photosensitive organic resin film formed on the first nitride insulating film; a second nitride insulating film formed on the photosensitive organic resin …
- Who is the assignee on this patent?
- Semiconductor Energy Lab
- What technology area does this patent fall under?
- Primary CPC classification G02F1/136227. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Aug 11 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).