Method for forming source/drain contacts
US-2024379814-A1 · Nov 14, 2024 · US
Transistor and method of fabricating the same
US9105726B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105726-B2 |
| Application number | US-201414192239-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 27, 2014 |
| Priority date | Jun 14, 2013 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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- Title
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Abstract
Official abstract text for this publication.
Provided is a transistor. The transistor includes: a substrate; a semiconductor layer provided on the substrate and having one side vertical to the substrate and the other side facing the one side; a first electrode extending along the substrate and contacting the one side of the semiconductor layer; a second electrode extending along the substrate and contacting the other side of the semiconductor layer; a conductive wire disposed on the first electrode and spaced from the second electrode; a gate electrode provided on the semiconductor layer; and a gate insulating layer disposed between the semiconductor layer and the gate electrode, wherein the semiconductor layer, the first electrode, and the second electrode have a coplanar.
First claim
Opening claim text (preview).
What is claimed is: 1. A transistor comprising: a substrate; a semiconductor layer provided on the substrate and having one side vertical to the substrate and the other side facing the one side; a first electrode extending along the substrate and contacting the one side of the semiconductor layer; a second electrode extending along the substrate and contacting the other side of the semiconductor layer; a conductive wire disposed on the first electrode and spaced from the s…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10D64/62Primary
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9105726B2 cover?
- Provided is a transistor. The transistor includes: a substrate; a semiconductor layer provided on the substrate and having one side vertical to the substrate and the other side facing the one side; a first electrode extending along the substrate and contacting the one side of the semiconductor layer; a second electrode extending along the substrate and contacting the other side of the semicondu…
- Who is the assignee on this patent?
- Korea Electronics Telecomm
- What technology area does this patent fall under?
- Primary CPC classification H10D64/62. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 11 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).