Semiconductor device having metal gate and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-9105720-B2
Application number	US-201314023481-A
Country	US
Kind code	B2
Filing date	Sep 11, 2013
Priority date	Sep 11, 2013
Publication date	Aug 11, 2015
Grant date	Aug 11, 2015

Abstract

A method for manufacturing a semiconductor device having metal gate includes following steps. A substrate having at least a first semiconductor device formed thereon is provided. The first semiconductor device includes a first gate trench formed therein. Next, an n-typed work function metal layer is formed in the first gate trench. After forming the n-typed work function metal layer, a nitridation process is performed to form a first protecting layer on the n-typed work function metal layer. After forming the first protecting layer, an oxidation process is performed to the first protecting layer to form a second protecting layer on the n-typed work function metal layer. Then, a gap filling metal layer is formed to fill up the first gate trench.

First claim

What is claimed is:

1. A method for manufacturing a semiconductor device having metal gate, comprising:
providing a substrate having at least a first semiconductor device formed thereon, and the first semiconductor device comprising a first gate trench formed therein;
sequentially forming a bottom barrier layer, an etch stop layer, and a p-typed work function metal layer on the substrate;
forming an n-typed work function metal layer in the first gate trench after forming the p…

Assignees

• United Microelectronics Corp

Inventors

• Lin Chun-Hsien
• Liu An-Chi

Classifications

• H10D64/01318

  Electricity · mapped topic

• H10D64/691

  Electricity · mapped topic

• H10D30/0212

  Electricity · mapped topic

• H10D84/0177

  Electricity · mapped topic

• H10D84/038

  Electricity · mapped topic