Multigate metal oxide semiconductor devices and fabrication methods

Patent metadata

Field	Value
Publication number	US-9105719-B2
Application number	US-201313737682-A
Country	US
Kind code	B2
Filing date	Jan 9, 2013
Priority date	Jan 9, 2013
Publication date	Aug 11, 2015
Grant date	Aug 11, 2015

Abstract

A semiconductor device includes a first well and a second well implanted in a semiconductor substrate. The semiconductor device further includes a gate structure above the first and second wells between a raised source structure and a raised drain structure. The raised source structure above is in contact with the first well and connected with the gate structure through a first semiconductor fin structure. The raised drain structure above and in contact with the second well and connected with a second semiconductor fin structure. The second semiconductor fin structure includes at least a gap and a lightly doped portion.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a first well implanted in a semiconductor substrate;
a second well implanted in the semiconductor substrate;
a gate structure above the first and second wells;
a raised source structure above and in contact with the first well and connected with the gate structure through a first semiconductor fin structure; and
a raised drain structure above and in contact with the second well and connected with a second semicondu…

Assignees

• Broadcom Corp

Inventors

• Ito Akira

Classifications

• H10D30/601

  Electricity · mapped topic

• H10D30/62 Primary

  Electricity · mapped topic

• H10D30/023

  Electricity · mapped topic

• H10D30/603

  Electricity · mapped topic

• H10D30/611 Primary

  Electricity · mapped topic