Nano transistors with source/drain having side contacts to 2-d material
US-2024379800-A1 · Nov 14, 2024 · US
Transistors from vertical stacking of carbon nanotube thin films
US9105702B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105702-B2 |
| Application number | US-201213679613-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 16, 2012 |
| Priority date | Nov 16, 2012 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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Abstract
Official abstract text for this publication.
A carbon nanotube field-effect transistor is disclosed. The carbon nanotube field-effect transistor includes a first carbon nanotube film, a first gate layer coupled to the first carbon nanotube film and a second carbon nanotube film coupled to the first gate layer opposite the first gate layer. The first gate layer is configured to influence an electric field within the first carbon nanotube film as well as to influence an electric field of the second carbon nanotube film. At least one of a source contact and a drain contact are coupled to the first and second carbon nanotube film and are separated from the first gate layer by an underlap region.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of forming a carbon nanotube field-effect transistor, comprising: forming a first carbon nanotube film; forming a first gate structure on a surface of the first carbon nanotube film to influence an electric field of the first carbon nanotube film; forming a source contact and a drain contact on the first carbon nanotube film, wherein at least one of the source contact and the drain contact is separated from the first gate structure by an underla…
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Electricity · mapped topic
Operations & Transport · mapped topic
Operations & Transport · mapped topic
Operations & Transport · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9105702B2 cover?
- A carbon nanotube field-effect transistor is disclosed. The carbon nanotube field-effect transistor includes a first carbon nanotube film, a first gate layer coupled to the first carbon nanotube film and a second carbon nanotube film coupled to the first gate layer opposite the first gate layer. The first gate layer is configured to influence an electric field within the first carbon nanotube f…
- Who is the assignee on this patent?
- IBM
- What technology area does this patent fall under?
- Primary CPC classification H10D30/01. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 11 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).