Multilevel interconnect structures and methods of fabricating same

US9105698B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9105698-B2
Application numberUS-201414304111-A
CountryUS
Kind codeB2
Filing dateJun 13, 2014
Priority dateApr 27, 2010
Publication dateAug 11, 2015
Grant dateAug 11, 2015

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Abstract

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A multilevel interconnect structure for a semiconductor device includes an intermetal dielectric layer with funnel-shaped connecting vias. The funnel-shaped connecting vias are provided in connection with systems exhibiting submicron spacings. The architecture of the multilevel interconnect structure provides a low resistance connecting via.

First claim

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What is claimed is: 1. A method for fabricating a multilevel interconnect structure with a first conducting level and a second conducting level, comprising: depositing a first dielectric layer over the first conducting level; depositing an intermediate dielectric layer on the first dielectric layer; performing chemical mechanical polishing after depositing the intermediate dielectric layer, wherein the chemical mechanical polishing ends below an upper level of the first dielec…

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What does patent US9105698B2 cover?
A multilevel interconnect structure for a semiconductor device includes an intermetal dielectric layer with funnel-shaped connecting vias. The funnel-shaped connecting vias are provided in connection with systems exhibiting submicron spacings. The architecture of the multilevel interconnect structure provides a low resistance connecting via.
Who is the assignee on this patent?
St Microelectronics Srl
What technology area does this patent fall under?
Primary CPC classification H10W20/071. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Aug 11 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).