Fabrication of localized SOI on localized thick box using selective epitaxy on bulk semiconductor substrates for photonics device integration

Patent metadata

Field	Value
Publication number	US-9105686-B2
Application number	US-201213667384-A
Country	US
Kind code	B2
Filing date	Nov 2, 2012
Priority date	Nov 2, 2012
Publication date	Aug 11, 2015
Grant date	Aug 11, 2015

Abstract

Photonic devices are created by laterally growing a semiconductor material (i.e., a localized semiconductor-on-insulator layer) over a localized buried oxide (BOX) created in a semiconductor by either a trench isolation process or thermal oxidation. In one embodiment, and after trench formation in a semiconductor substrate, the trench is filled with oxide to create a localized BOX. The top surface of the BOX is recessed to depth below the topmost surface of the semiconductor substrate to expose sidewall surfaces of the semiconductor substrate within each trench. A semiconductor material is then epitaxially grown from the exposed sidewall surfaces of the semiconductor substrate.

First claim

What is claimed is:

1. A method of forming a semiconductor structure comprising:
providing a patterned material stack having at least one opening on an upper surface of a semiconductor substrate;
forming at least one trench within the semiconductor substrate utilizing said patterned material stack as an etch mask;
filling said at least one trench and said at least opening with an oxide;
recessing portions of said oxide below said upper surface of said semiconductor substrate…

Assignees

• IBM

Inventors

• Assefa Solomon
• Green William M
• Khater Marwan H
• Vlasov Yurri A

Classifications

• H10P76/2041

  Electricity · mapped topic

• H10W10/181

  Electricity · mapped topic

• H10W10/0145

  Electricity · mapped topic

• H10W10/061

  Electricity · mapped topic

• H10W10/17

  Electricity · mapped topic