Method of forming shallow trench isolation structure

Patent metadata

Field	Value
Publication number	US-9105685-B2
Application number	US-201313941208-A
Country	US
Kind code	B2
Filing date	Jul 12, 2013
Priority date	Jul 12, 2013
Publication date	Aug 11, 2015
Grant date	Aug 11, 2015

Abstract

A method of forming a shallow trench isolation structure is disclosed. Hard mask patterns are formed on a substrate. A portion of the substrate is removed, using the hard mask patterns as a mask, to form first trenches in the substrate, wherein a fin is disposed between the neighboring first trenches. A filling layer is formed in the first trenches. A patterned mask layer is formed on the filling layer. A portion of the filling layer and a portion of the fins are removed, using the patterned mask layer as a mask, to form second trenches in the substrate. A first insulating layer is formed on the substrate filling in the second trenches.

First claim

What is claimed is:

1. A method of forming a shallow trench isolation structure, comprising:
forming a plurality of hard mask patterns on a substrate;
removing a portion of the substrate by using the hard mask patterns as a mask, so as to form a plurality of first trenches in the substrate, wherein a fin is disposed between the neighboring first trenches;
forming a filling layer in the first trenches;
forming a patterned mask layer on the filling layer;
removing a portion…

Assignees

• United Microelectronics Corp

Inventors

• Lin Chien-Ting
• Tsai Shih-Hung
• Lin Chun-Hsien

Classifications

• H10P50/695

  Electricity · mapped topic

• H10P50/691

  Electricity · mapped topic

• H10W10/17

  Electricity · mapped topic

• H10W10/014 Primary

  Electricity · mapped topic

• H10D86/011

  Electricity · mapped topic