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US9105682B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105682-B2 |
| Application number | US-201113036088-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 28, 2011 |
| Priority date | Feb 28, 2011 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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- Title
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Abstract
Official abstract text for this publication.
Disclosed is a semiconductor component that includes a semiconductor body, a first emitter region of a first conductivity type in the semiconductor body, a second emitter region of a second conductivity type spaced apart from the first emitter region in a vertical direction of the semiconductor body, a base region of one conductivity type arranged between the first emitter region and the second emitter region, and at least two higher doped regions of the same conductivity type as the base region and arranged in the base region. The at least two higher doped regions are spaced apart from one another in a lateral direction of the semiconductor body and separated from one another only by sections of the base region.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor component, comprising: a semiconductor body; a first emitter region of a first conductivity type in the semiconductor body; a second emitter region of a second conductivity type spaced apart from the first emitter region in a vertical direction of the semiconductor body; a base region of one of the first and second conductivity types arranged between the first emitter region and the second emitter region; at least two higher doped reg…
Assignees
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Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10D18/60Primary
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9105682B2 cover?
- Disclosed is a semiconductor component that includes a semiconductor body, a first emitter region of a first conductivity type in the semiconductor body, a second emitter region of a second conductivity type spaced apart from the first emitter region in a vertical direction of the semiconductor body, a base region of one conductivity type arranged between the first emitter region and the second…
- Who is the assignee on this patent?
- Felsl Hans-Peter, Raker Thomas, Schulze Hans-Joachim, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification H10D18/60. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 11 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).