Semiconductor device and production method for semiconductor device
US-2015014742-A1 · Jan 15, 2015 · US
Insulated gate bipolar transistor
US9105680B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105680-B2 |
| Application number | US-201414149412-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 7, 2014 |
| Priority date | Jul 7, 2011 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
An IGBT has layers between emitter and collector sides. The layers include a collector layer on the collector side, a drift layer, a base layer of a second conductivity type, a first source region arranged on the base layer towards the emitter side, a trench gate electrode arranged lateral to the base layer and extending deeper into the drift layer than the base layer, a well arranged lateral to the base layer and extending deeper into the drift layer than the base layer, an enhancement layer surrounding the base layer so as to completely separate the base layer from the drift layer and the well, an electrically conducting layer covering the well and separated from the well by a second electrically insulating layer, and a third insulating layer having a recess on top of the electrically conducting layer such that the electrically conducting layer electrically contacts a emitter electrode.
First claim
Opening claim text (preview).
What is claimed is: 1. An insulated gated bipolar transistor having layers between an emitter electrode on an emitter side and a collector electrode on a collector side opposite to the emitter side, the insulated gate bipolar transistor comprising: a drift layer of a first conductivity type; a collector layer of a second conductivity type different than the first conductivity type, the collector layer being arranged between the drift layer and the collector electrode and electri…
Assignees
Inventors
Classifications
Electricity · mapped topic
Electricity · mapped topic
- H10D12/441Primary
Electricity · mapped topic
Electricity · mapped topic
- H10D12/481Primary
Electricity · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US9105680B2 cover?
- An IGBT has layers between emitter and collector sides. The layers include a collector layer on the collector side, a drift layer, a base layer of a second conductivity type, a first source region arranged on the base layer towards the emitter side, a trench gate electrode arranged lateral to the base layer and extending deeper into the drift layer than the base layer, a well arranged lateral t…
- Who is the assignee on this patent?
- Abb Technology Ag
- What technology area does this patent fall under?
- Primary CPC classification H10D12/441. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 11 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).