SiC semiconductor device
US-12080760-B2 · Sep 3, 2024 · US
Semiconductor device and insulated gate bipolar transistor with barrier regions
US9105679B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105679-B2 |
| Application number | US-201314091955-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 27, 2013 |
| Priority date | Nov 27, 2013 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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Abstract
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In a semiconductor device a barrier region is sandwiched between a drift region and a charge carrier transfer region. The barrier and charge carrier transfer regions form a pn junction. The barrier and drift regions form a homojunction. A mean impurity concentration in the barrier region is at least ten times as high as an impurity concentration in the drift region. A control structure is arranged to form an inversion layer in the drift and barrier regions in an inversion state. No inversion layer is formed in the drift and barrier regions in a non-inversion state.
First claim
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What is claimed is: 1. A semiconductor device, comprising: a barrier region sandwiched between a drift region and a charge carrier transfer region, the barrier and charge carrier transfer regions forming a pn junction and the barrier and drift regions forming a homojunction, wherein an impurity concentration in the barrier region is at least ten times as high as an impurity concentration in the drift region; and a control structure configured to form an inversion layer in the dr…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9105679B2 cover?
- In a semiconductor device a barrier region is sandwiched between a drift region and a charge carrier transfer region. The barrier and charge carrier transfer regions form a pn junction. The barrier and drift regions form a homojunction. A mean impurity concentration in the barrier region is at least ten times as high as an impurity concentration in the drift region. A control structure is arran…
- Who is the assignee on this patent?
- Infineon Technologies Ag
- What technology area does this patent fall under?
- Primary CPC classification H10D64/117. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 11 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).