Substrate treating apparatus and substrate treating method
US-2024030057-A1 · Jan 25, 2024 · US
US9105670B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105670-B2 |
| Application number | US-201314023899-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 11, 2013 |
| Priority date | Mar 4, 2008 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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A method comprises forming a trench in a substrate. The method also comprises depositing a magnetic tunnel junction (MTJ) structure within the trench. The method further comprises planarizing the MTJ.
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What is claimed is: 1. A method of forming a magnetic tunnel junction device, the method comprising: forming a trench in a substrate, that comprises an inter-metal dielectric layer and a cap film layer; depositing a magnetic tunnel junction (MTJ) structure within the trench; and planarizing the MTJ structure without performing a photo-etching process on the MTJ structure. 2. The method of claim 1 , wherein planarizing the MTJ structure comprises planariz…
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