Transistor contacts and methods of forming the same
US-2024395871-A1 · Nov 28, 2024 · US
High voltage device and manufacturing method thereof
US9105656B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105656-B2 |
| Application number | US-201314055622-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 16, 2013 |
| Priority date | Mar 1, 2011 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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Abstract
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The present invention discloses a high voltage device and a manufacturing method thereof. The high voltage device includes: a first conductive type substrate in which isolation regions are formed for defining a device region; agate formed on the first conductive type substrate; a source and a drain formed in the device region and located at both sides of the gate respectively, and doped with second conductive type impurities; a second conductive type well, which is formed in the first conductive type substrate, and surrounds the drain from top view; and a first deep trench isolation structure, which is formed in the first conductive type substrate, and is located in the second conductive type well between the source and the drain from top view, wherein the depth of the first deep trench isolation structure is deeper than the second conductive type well from the cross-sectional view.
First claim
Opening claim text (preview).
What is claimed is: 1. A manufacturing method of a high voltage device, comprising: forming isolation regions for defining a device region in a first conductive type substrate; forming a gate on the first conductive type substrate; forming a source and a drain in the device region, at both sides of the gate respectively, wherein the source and the drain are doped with second conductive type impurities; forming a second conductive type well in the first conductive type substr…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9105656B2 cover?
- The present invention discloses a high voltage device and a manufacturing method thereof. The high voltage device includes: a first conductive type substrate in which isolation regions are formed for defining a device region; agate formed on the first conductive type substrate; a source and a drain formed in the device region and located at both sides of the gate respectively, and doped with se…
- Who is the assignee on this patent?
- Huang Tsung-Yi, Lo Kuo-Hsuan, Richtek Technology Corp
- What technology area does this patent fall under?
- Primary CPC classification H10D62/116. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 11 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).