Interlevel dielectric stack for interconnect structures

Patent metadata

Field	Value
Publication number	US-9105642-B2
Application number	US-201414286008-A
Country	US
Kind code	B2
Filing date	May 23, 2014
Priority date	Jan 5, 2012
Publication date	Aug 11, 2015
Grant date	Aug 11, 2015

Abstract

A dielectric stack and method of depositing the stack to a substrate using a single step deposition process. The dielectric stack includes a dense layer and a porous layer of the same elemental compound with different compositional atomic percentage, density, and porosity. The stack enhances mechanical modulus strength and enhances oxidation and copper diffusion barrier properties. The dielectric stack has inorganic or hybrid inorganic-organic random three-dimensional covalent bonding throughout the network, which contain different regions of different chemical compositions such as a cap component adjacent to a low-k component of the same type of material but with higher porosity.

First claim

What is claimed is:

1. A method for forming a dielectric stack structure comprising,
introducing in a reactor a first vapor precursor comprising dimethylsilacyclopentane (DMSCP) and a second vapor precursor of at least one of ammonia and nitrogen gas;
striking a plasma in the reactor;
depositing a first layer of silicon, carbon, nitrogen and hydrogen on a substrate;
reducing the flow rate of the second vapor precursor in the reactor;
depositing a second layer of silicon, c…

Assignees

• IBM

Inventors

• Bonilla Griselda
• Grill Alfred
• Haigh Jr Thomas J
• Nitta Satyanarayana V
• Nguyen Son

Classifications

• H10P14/6905

  Electricity · mapped topic

• H10P14/6336

  Electricity · mapped topic

• H10W20/095

  Electricity · mapped topic

• H10W20/077

  Electricity · mapped topic

• H10W20/075

  Electricity · mapped topic