Air-Gap Assisted Etch Self-Aligned Dual Damascene
US-2015380298-A1 · Dec 31, 2015 · US
US9105641B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105641-B2 |
| Application number | US-201414486493-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 15, 2014 |
| Priority date | Jul 31, 2012 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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The profile of a via can be controlled by forming a profile control liner within each via opening that is formed into a dielectric material prior to forming a line opening within the dielectric material. The presence of the profile control liner within each via opening during the formation of the line opening prevents rounding of the corners of a dielectric material portion that is present beneath the line opening and adjacent the via opening.
Opening claim text (preview).
What is claimed is: 1. An interconnect structure comprising: a dielectric material comprising a via opening and a line opening, wherein said line opening is located above and connected to said via opening; a profile control liner present at least partially on sidewalls of said dielectric material within said via opening; a diffusion barrier liner located within said via opening and said line opening; and a conductive material located within remaining portions of said via ope…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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