Semiconductor constructions and methods of forming electrically conductive contacts

Patent metadata

Field	Value
Publication number	US-9105636-B2
Application number	US-201313975503-A
Country	US
Kind code	B2
Filing date	Aug 26, 2013
Priority date	Aug 26, 2013
Publication date	Aug 11, 2015
Grant date	Aug 11, 2015

Abstract

Some embodiments include methods of forming electrically conductive contacts. An opening is formed through an insulative material to a conductive structure. A conductive plug is formed within a bottom region of the opening. A spacer is formed to line a lateral periphery of an upper region of the opening, and to leave an inner portion of an upper surface of the plug exposed. A conductive material is formed against the inner portion of the upper surface of the plug. Some embodiments include semiconductor constructions having a conductive plug within an insulative stack and against a copper-containing material. A spacer is over an outer portion of an upper surface of the plug and not directly above an inner portion of the upper surface. A conductive material is over the inner portion of the upper surface of the plug and against an inner lateral surface of the spacer.

First claim

I claim:

1. A method of forming an electrically conductive contact, comprising:
forming an opening through an electrically insulative material to an electrically conductive structure;
forming an electrically conductive plug within a bottom region of the opening;
forming a spacer to line a lateral periphery of an upper region of the opening; the spacer being over an outer portion of an upper surface of the electrically conductive plug and leaving an inner portion of the upper s…

Assignees

• Micron Technology Inc

Inventors

• Liu Zengtao T

Classifications

• H10W20/4451

  Electricity · mapped topic

• H10W20/4441

  Electricity · mapped topic

• H10W20/425

  Electricity · mapped topic

• H10W20/081

  Electricity · mapped topic

• H10W20/076

  Electricity · mapped topic