Oxide-based semiconductor non-linear element having gate electrode electrically connected to source or drain electrode

Patent metadata

Field	Value
Publication number	US-9105609-B2
Application number	US-91229610-A
Country	US
Kind code	B2
Filing date	Oct 26, 2010
Priority date	Oct 30, 2009
Publication date	Aug 11, 2015
Grant date	Aug 11, 2015

Abstract

A non-linear element (e.g., a diode) with small reverse saturation current is provided. A non-linear element includes a first electrode provided over a substrate, an oxide semiconductor film provided on and in contact with the first electrode, a second electrode provided on and in contact with the oxide semiconductor film, a gate insulating film covering the first electrode, the oxide semiconductor film, and the second electrode, and a third electrode provided in contact with the gate insulating film and adjacent to a side surface of the oxide semiconductor film with the gate insulating film interposed therebetween or a third electrode provided in contact with the gate insulating film and surrounding the second electrode. The third electrode is connected to the first electrode or the second electrode.

First claim

The invention claimed is:

1. A non-linear element comprising:
a first electrode over a substrate;
an oxide semiconductor film on and in contact with the first electrode;
a second electrode on and in contact with the oxide semiconductor film;
a gate insulating film covering the first electrode, the oxide semiconductor film, and the second electrode;
a plurality of third electrodes adjacent to the oxide semiconductor film with the gate insulating film interposed therebetween…

Assignees

• Yamazaki Shunpei
• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei

Classifications

• H10D30/6757

  Electricity · mapped topic

• H10D30/6755

  Electricity · mapped topic

• H10D30/6734

  Electricity · mapped topic

• H10D12/211

  Electricity · mapped topic

• H10D30/6735 Primary

  Electricity · mapped topic