Embedded three-dimensional capacitor

US9105602B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9105602-B2
Application numberUS-201414179239-A
CountryUS
Kind codeB2
Filing dateFeb 12, 2014
Priority dateDec 23, 2013
Publication dateAug 11, 2015
Grant dateAug 11, 2015

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  5. First independent claim

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Abstract

Official abstract text for this publication.

An embedded capacitor is provided that includes a substrate having a dielectric-filled window. A metal-insulator-metal structure lines a plurality of vias extending through the dielectric-filled window and covers at least partially opposing sides of the dielectric-filled window.

First claim

Opening claim text (preview).

We claim: 1. A device, comprising: a substrate; a window extending through the substrate; a dielectric material within the window; a plurality of vias extending from a first side of the dielectric material to an opposing second side of the dielectric material; and a metal-insulator-metal (MIM) structure lining the vias and at least partially lining the first and second sides of the dielectric material, wherein an electrode layer in the MIM structure includes a gap outside of the w…

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What does patent US9105602B2 cover?
An embedded capacitor is provided that includes a substrate having a dielectric-filled window. A metal-insulator-metal structure lines a plurality of vias extending through the dielectric-filled window and covers at least partially opposing sides of the dielectric-filled window.
Who is the assignee on this patent?
Qualcomm Inc
What technology area does this patent fall under?
Primary CPC classification H10D1/716. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Aug 11 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).