Capacitor and semiconductor device including the same
US-2024387608-A1 · Nov 21, 2024 · US
US9105602B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105602-B2 |
| Application number | US-201414179239-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 12, 2014 |
| Priority date | Dec 23, 2013 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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An embedded capacitor is provided that includes a substrate having a dielectric-filled window. A metal-insulator-metal structure lines a plurality of vias extending through the dielectric-filled window and covers at least partially opposing sides of the dielectric-filled window.
Opening claim text (preview).
We claim: 1. A device, comprising: a substrate; a window extending through the substrate; a dielectric material within the window; a plurality of vias extending from a first side of the dielectric material to an opposing second side of the dielectric material; and a metal-insulator-metal (MIM) structure lining the vias and at least partially lining the first and second sides of the dielectric material, wherein an electrode layer in the MIM structure includes a gap outside of the w…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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