Semiconductor device
US-2024421048-A1 · Dec 19, 2024 · US
GaN power device with solderable back metal
US9105579B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105579-B2 |
| Application number | US-201213552365-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 18, 2012 |
| Priority date | Jul 18, 2012 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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- Title
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Abstract
Official abstract text for this publication.
A method for fabricating a vertical gallium nitride (GaN) power device can include providing a GaN substrate with a top surface and a bottom surface, forming a device layer coupled to the top surface of the GaN substrate, and forming a metal contact on a top surface of the vertical GaN power device. The method can further include forming a backside metal by forming an adhesion layer coupled to the bottom surface of the GaN substrate, forming a diffusion barrier coupled to the adhesion layer, and forming a protection layer coupled to the diffusion barrier. The vertical GaN power device can be configured to conduct electricity between the metal contact and the backside metal.
First claim
Opening claim text (preview).
What is claimed is: 1. A method for fabricating a vertical gallium nitride (GaN) power device, the method comprising: providing a GaN substrate with a top surface and a bottom surface, wherein a root-mean-square (RMS) surface roughness at the bottom surface of the GaN substrate is more than 20 nm and less than 200 nm; forming a device layer contacting the top surface of the GaN substrate; forming a metal contact on a top surface of the vertical GaN power device; forming a ba…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9105579B2 cover?
- A method for fabricating a vertical gallium nitride (GaN) power device can include providing a GaN substrate with a top surface and a bottom surface, forming a device layer coupled to the top surface of the GaN substrate, and forming a metal contact on a top surface of the vertical GaN power device. The method can further include forming a backside metal by forming an adhesion layer coupled to …
- Who is the assignee on this patent?
- Hyland Patrick James Lazlo, Alvarez Brian Joel, Disney Donald R, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification H10W70/417. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 11 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).