Electronic device comprising a semiconductor memory unit

Patent metadata

Field	Value
Publication number	US-9105574-B2
Application number	US-201314144444-A
Country	US
Kind code	B2
Filing date	Dec 30, 2013
Priority date	Mar 5, 2013
Publication date	Aug 11, 2015
Grant date	Aug 11, 2015

Abstract

Devices and methods based on disclosed technology include, among others, an electronic device capable of improving a signal transfer characteristic and a method for fabricating the same. Specifically, an electronic device in one implementation includes a plurality of buried gates formed in a substrate, open parts formed in the substrate on both sides of the buried gate, isolation layers each formed between a sidewall of the open part and a sidewall of the buried gate, source/drain regions formed in the substrate under the respective open parts, and contact plugs buried in the respective open parts.

First claim

What is claimed is:

1. An electronic device comprising a semiconductor memory unit that includes:
a substrate;
word lines including a plurality of buried gates formed in the substrate;
open parts formed in the substrate on two opposing sides of the buried gates;
isolation layers formed in the open parts, each isolation layer formed between a sidewall of an open part and a sidewall of a corresponding buried gate;
source and drain regions formed in the substrate under respec…

Assignees

• Sk Hynix Inc

Inventors

• Song Seok-Pyo
• Yi Jae-Yun
• Kim Se-Dong

Classifications

• H10D84/0135

  Electricity · mapped topic

• H10D84/038

  Electricity · mapped topic

• H10D84/013

  Electricity · mapped topic

• H10D64/513 Primary

  Electricity · mapped topic

• H01L27/2436 Primary

  Electricity · mapped topic