Mram device with octagon profile
US-2024135978-A1 · Apr 25, 2024 · US
Method of etching MTJ using CO process chemistries
US9105569B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105569-B2 |
| Application number | US-201113214107-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 19, 2011 |
| Priority date | Aug 19, 2010 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A method for fabricating a magnetic film structure is provided. The method comprises forming a magnetic structure on a bottom electrode layer, the magnetic structure comprising at least one pinned bottom magnetic film layer having a fixed magnetic orientation; at least one top magnetic film layer whose magnetic orientation can be manipulated by a current; and a tunneling layer between the bottom magnetic film layer and the top magnetic film layer; forming a metallic hard mask atop the magnetic structure; patterning and etching the metallic hard mask to define exposed areas of the magnetic structure; selectively etching the exposed areas of the magnetic structure by a chemical etch process based on a CO etch chemistry to form discrete magnetic bits.
First claim
Opening claim text (preview).
The invention claimed is: 1. A method for fabricating a magnetic film structure, the method comprising: forming a magnetic structure on a bottom electrode layer, wherein the magnetic structure includes: at least one pinned bottom magnetic film layer having a fixed magnetic orientation; at least one top magnetic film layer having a magnetic orientation that can be manipulated by a current; and a tunneling layer between the at least one pinned bottom magnetic film layer and the…
Assignees
Inventors
Classifications
Electricity · mapped topic
Electricity · mapped topic
- H01L27/222Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US9105569B2 cover?
- A method for fabricating a magnetic film structure is provided. The method comprises forming a magnetic structure on a bottom electrode layer, the magnetic structure comprising at least one pinned bottom magnetic film layer having a fixed magnetic orientation; at least one top magnetic film layer whose magnetic orientation can be manipulated by a current; and a tunneling layer between the botto…
- Who is the assignee on this patent?
- Mani Krishnakumar, Chen Benjamin, Iii Holdings 1 Llc
- What technology area does this patent fall under?
- Primary CPC classification H01L27/222. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 11 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).