Nitride semiconductor device

Patent metadata

Field	Value
Publication number	US-9105565-B2
Application number	US-201313792426-A
Country	US
Kind code	B2
Filing date	Mar 11, 2013
Priority date	Mar 26, 2012
Publication date	Aug 11, 2015
Grant date	Aug 11, 2015

Abstract

According to one embodiment, a nitride semiconductor device includes semiconductor stacked layers provided on a substrate and including a nitride semiconductor; a source electrode and a drain electrode provided on the layers and being in contact with the layers; and a gate electrode provided on the layers and provided between the source electrode and the drain electrode. The layers have a first barrier layer, a second barrier layer, and a carrier running layer interposed between the first barrier layer and the second barrier layer. The second barrier layer and the carrier running layer are removed in a region in which the source electrode on the layers is provided. A part of the source electrode is in contact with the first barrier layer. And another part of the source electrode other than the part of the source electrode is in contact with the second barrier layer.

First claim

What is claimed is:

1. A nitride semiconductor device comprising:
a substrate;
semiconductor stacked layers disposed on the substrate, comprising a nitride semiconductor;
a source electrode and a drain electrode disposed on the semiconductor stacked layers and in contact with the semiconductor stacked layers; and
a gate electrode disposed on the semiconductor stacked layers and between the source electrode and the drain electrode,
wherein:
the semiconductor stacked layer…

Assignees

• Toshiba Kk

Inventors

• Kuraguchi Masahiko

Classifications

• H10D64/513

  Electricity · mapped topic

• H10D64/256

  Electricity · mapped topic

• H10D64/62

  Electricity · mapped topic

• H10D62/85

  Electricity · mapped topic

• H10D30/4732

  Electricity · mapped topic